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IGBT

VAST SEMI's IGBT utilizes a trench field cutoff device structure to achieve lower on-state voltage drops and reduced switching losses. The company has introduced the fifth and sixth generation IGBT series products, covering voltage ranges from 600V to 1700V. These products are suitable for applications in household appliances, photovoltaic energy storage inverters, DC charging piles, automotive main drives, UPS, and other fields.

    1. Package

    2. V(BR)CES

    3. Ic@100℃

      Min：15
      Max：100

    4. VCE(sat)

      Min：1.4
      Max：2

    5. VGE(th)

      Min：4.8
      Max：6

    6. Eoff

      Min：0.3
      Max：4.4

    7. VF

      Min：1.3
      Max：2.7

    8. Technology

Inquiry Datasheet Part Number Package V(BR)CES Ic@100℃ VCE(sat) VGE(th) Eoff VF Technology
Max Typ Typ Typ Typ
(V) (A) (V) (V) (mJ) (V)

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